| 摘要 |
PURPOSE: A wafer for a semiconductor device is provided to simplify manufacturing process of a one transistor DRAM cell device having a nonvolatile memory function and to improve performance of the DRAM cell device. CONSTITUTION: A first insulating layer(2) is formed on the upper part of a substrate(1). A charge storage layer(3) is formed on the first insulating layer. The charge storage layer is formed into among insulation materials, a semiconductor, and metal materials. A second insulating layer(4) is formed on the charge storage layer. A semiconductor layer(5) is formed on the second insulating layer. The semiconductor layer is formed into a single semiconductor layer or a plurality of semiconductor layers over 2.
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