发明名称 |
MAGNETORESISTANCE ELEMENT, MRAM, AND INITIALIZATION METHOD FOR MAGNETORESISTANCE ELEMENT |
摘要 |
A magnetoresistance element is provided with: a magnetization recording layer that is a ferromagnetic layer. The magnetization recording layer includes: a magnetization reversal region having a reversible magnetization; a first magnetization fixed region connected to a first boundary of the magnetization reversal region and having a magnetization direction fixed in a first direction; and a second magnetization fixed region connected to a second boundary of the magnetization reversal region and having a magnetization direction fixed in a second direction. At least one magnetization reversal facilitation structure which is a structure in which a magnetization is reversed more easily than the remaining portion is provided for a portion of the second magnetization fixed region.
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申请公布号 |
US2011188298(A1) |
申请公布日期 |
2011.08.04 |
申请号 |
US200913062764 |
申请日期 |
2009.10.16 |
申请人 |
SUZUKI TETSUHIRO;FUKAMI SHUNSUKE;NAGAHARA KIYOKAZU;OHSHIMA NORIKAZU;ISHIWATA NOBUYUKI |
发明人 |
SUZUKI TETSUHIRO;FUKAMI SHUNSUKE;NAGAHARA KIYOKAZU;OHSHIMA NORIKAZU;ISHIWATA NOBUYUKI |
分类号 |
G11C11/00;H01L29/82 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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