发明名称 METHOD OF DOPING IMPURITIES, METHOD OF MANUFACTURING A SOLAR CELL USING THE METHOD AND SOLAR CELL MANUFACTURED BY USING THE METHOD
摘要 There are provided a method of doping impurities, a method of manufacturing a solar cell, and a solar cell. In the doping method, a diffusion protective pattern having at least one opening is formed on a substrate that contains a first area and a second area. A first dopant is doped in the first area by using a first mask to form a first doped pattern. A second dopant is doped in the second area by using a second mask to form a second doped pattern. The first dopant and the second dopant may be doped in neighboring first and second areas, respectively, without creating a short circuit by using the first mask, the second mask, and the diffusion protective pattern.
申请公布号 US2011186118(A1) 申请公布日期 2011.08.04
申请号 US20100888939 申请日期 2010.09.23
申请人 KIM SANG-HO 发明人 KIM SANG-HO
分类号 H01L31/02;B05D5/12;H01L31/18 主分类号 H01L31/02
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