发明名称 METHOD OF MANUFACTURING P-TYPE COMPOUND SEMICONDUCTOR LAYER, AND COMPOUND THIN-FILM SOLAR CELL
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a p-type semiconductor layer formed of laminated films of nanoink, which are easily formed through a printing process. <P>SOLUTION: The p-type compound semiconductor layer which is fine and has high crystallinity is easily manufactured by reducing the nanoink laminate film formed by laminating: a film formed of nanoink comprising a nanoink precursor, a resin, and a liquid organic compound with C3-C18; and a film formed of nanoink comprising a hydroxide of Cu or Zn and a liquid organic compound. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011151328(A) 申请公布日期 2011.08.04
申请号 JP20100013506 申请日期 2010.01.25
申请人 TODA KOGYO CORP 发明人 HISAYUKI YURIE;KOBAYASHI NARIYA
分类号 H01L31/04 主分类号 H01L31/04
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