| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an amorphous carbon orientation film having a new structure and showing high conductivity, and a method for forming the same. <P>SOLUTION: The amorphous carbon orientation film uses C as the main component and includes 3-20 atom% N, and >0 atom% and ≤20 atom% H and has in the range of 70 atomic percent to less than 100 atomic percent of carbon (Csp<SP>2</SP>) having an sp<SP>2</SP>hybrid orbital when the total amount of carbon is 100 atomic percent, wherein the (002) plane of graphite is oriented along the thickness direction. The film can be deposited by means of a direct current plasma CVD method in which a reactant gas comprising a nitrogen gas and at least one type of compound gas selected from a carbocyclic compound gas that comprises Csp<SP>2</SP>and a nitrogen-containing heterocyclic compound gas that contains Csp<SP>2</SP>, nitrogen and/or silicon is discharged at 1,500 V or more. <P>COPYRIGHT: (C)2011,JPO&INPIT |
