HIGH ELECTRON MOBILITY TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide an electrode for hole discharge such that an increase in electric resistance of a two-dimensional electron gas layer is suppressed for an HEMT. SOLUTION: The HEMT 10 includes: a hole selectively passing film 43 which comes into contact with a heterojunction layer 27 between a gate electrode 34 and a drain electrode 32; and the electrode for hole discharge 46 which comes into contact with the hole selectively passing film 43. The hole selectively passing film 43 has: a first partial region 42 which comes into contact with the heterojunction layer 27; and a second partial region 44 which comes into contact with the electrode for hole discharge 46. A concentration of a p-type impurity of the second partial region 44 is higher than a concentration of a p-type impurity of the first partial region 42. COPYRIGHT: (C)2011,JPO&INPIT