| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein the carrier density can be controlled with high accuracy. SOLUTION: The semiconductor device includes: a single crystal substrate 105; a semiconductor layer 101 which is made of hexagonal crystal with 6 mm symmetry and is formed on the single crystal substrate 105; a source electrode 102, a drain electrode 103, and a gate electrode 104 that are formed on the semiconductor layer 101. The main surfaces of a GaN layer 106 and an AlGaN layer 107 that constitute the semiconductor layer 101 respectively include the C-axis of the hexagonal crystal in the plane, and a longitudinal direction of a channel region 101a in the semiconductor layer 101 is parallel to the C-axis of the hexagonal crystal. COPYRIGHT: (C)2011,JPO&INPIT
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