| 发明名称 |
HIGH VOLTAGE SCRMOS IN BICMOS PROCESS TECHNOLOGIES |
| 摘要 |
An integrated circuit includes an SCRMOS transistor formed with a reduced surface field (RESURF) region (1024) around a drain region (1010) and an SCR terminal (1012). The RESURF region is the same conductivity type and more heaviliy doped than a drift region (1014). |
| 申请公布号 |
WO2011093953(A2) |
申请公布日期 |
2011.08.04 |
| 申请号 |
WO2010US60842 |
申请日期 |
2010.12.16 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED;TEXAS INSTRUMENTS JAPAN LIMITED;PENDHARKER, SAMEER, P. |
发明人 |
PENDHARKER, SAMEER, P. |
| 分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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