摘要 |
<p>A method for manufacturing a semiconductor layer comprises a step for preparing a first compound, a step for preparing a second compound, a step for producing a semiconductor layer forming solution, and a step for producing a semiconductor layer containing a I-III-VI group compound using the semiconductor layer forming solution. The first compound contains an organic compound containing a first chalcogen element, a first Lewis base, a I-B group element, and a first III-B group element. The second compound contains an organic ligand and a second III-B group element. The semiconductor layer forming solution contains the first compound, the second compound, and an organic solvent.</p> |
申请人 |
KYOCERA CORPORATION;OGURI, SEIJI;TAKEDA, KEIZO;YAMADA, KOICHIRO;TANIGAWA, KOTARO;TANAKA, ISAMU;SASAMORI, RIICHI;OGAWA, HIROMITSU |
发明人 |
OGURI, SEIJI;TAKEDA, KEIZO;YAMADA, KOICHIRO;TANIGAWA, KOTARO;TANAKA, ISAMU;SASAMORI, RIICHI;OGAWA, HIROMITSU |