SILICON BASED SOLAR CELL WITH EXCELLENT LIGHT ABSORPTION AND PHOTOELECTRIC TRANSFORMATION AND METHOD OF MANUFACTURING THE SOLAR CELL

摘要

PURPOSE: A silicon type solar cell with excellent light absorption and photoelectric transformation efficiency and a manufacturing thereof are provided to form an emitter layer using an epitaxial growing method, thereby enabling to make the thickness of the emitter layer thicker than an existed emitter layer and simplifying a manufacturing method. CONSTITUTION: A first conductive type silicon substrate is prepared(S310). The upper surface of the first conductive type silicon substrate is textured(S320). A second conductive type silicon layer(320) which is opposite to a first conductive type is formed using an epitaxial growing method on the first conductive type silicon substrate after texturing(S330). The first conductivity type silicon substrate(310) has a 1,1,1 crystallographic direction and the texturing is done by a dry etching method.