| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To produce a semiconductor wafer composed of silicon with a high yield and by an economical pulling up speed. <P>SOLUTION: A method for producing semiconductor wafers composed of silicon, comprises pulling a single crystal with a conical section having an increasing diameter and an adjoining cylindrical section having a diameter of at least 450 mm and a length of at least 800 mm from a melt contained in a crucible, at a pulling rate which, in the course of pulling the transition from the conical section to the cylindrical section, is at least 1.8 times higher than the average pulling rate during the pulling of the cylindrical section; cooling the growing single crystal with a cooling power of at least 20 kW; feeding heat from the sidewall of the crucible to the growing single crystal, wherein a gap having a height of at least 70 mm is present between a heat shield surrounding the growing single crystal and the surface of the melt; and slicing semiconductor wafers from the cylindrical section, wherein a plurality of the semiconductor wafers have a region with v-defects that extends from the center of the semiconductor wafers as far as the edge of the semiconductor wafers. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
