| 发明名称 |
MRI SENSOR BASED ON THE HALL EFFECT FOR CRM IMD APPLICATIONS |
| 摘要 |
A method and device can include a Hall effect sensor, which can be formed as a portion of an integrated circuit of an implantable device and which can produce a non-linear current path such as to permit detecting a magnetic field parallel with the orientation of the Hall effect sensor of the implantable device.
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| 申请公布号 |
US2011187360(A1) |
申请公布日期 |
2011.08.04 |
| 申请号 |
US201113019850 |
申请日期 |
2011.02.02 |
| 申请人 |
MAILE KEITH R;BOON SCOT C;CHAVAN ABHI V |
发明人 |
MAILE KEITH R.;BOON SCOT C.;CHAVAN ABHI V. |
| 分类号 |
G01R33/07 |
主分类号 |
G01R33/07 |
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