| 摘要 |
PROBLEM TO BE SOLVED: To achieve high performance of a semiconductor device by a strain technique using a silicon mixed crystal layer without increasing gate electrode resistance and without increasing the number of steps. SOLUTION: A first source drain region 114A is formed outside a first insulating side-wall spacer 111A when viewed from a first gate electrode 106A of a semiconductor substrate 100. After that, a recess portion 119 is formed outside a second insulating side-wall spacer 111B when viewed from a second gate electrode 106B of the semiconductor substrate 100, and the second gate electrode 106B is partially removed. Further, the silicon mixed crystal layer 120 to serve as a second source drain region 114B is formed thereafter in the recess portion 109. COPYRIGHT: (C)2011,JPO&INPIT
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