发明名称 Deposition Method for Passivation of Silicon Wafers
摘要 A substrate is mounted onto an elevated substrate support of a substrate carrier plate. The substrate carrier plate with the substrate is then placed in a plasma reactor. Due to the elevated substrate support, both opposite sides of the substrate are exposed to the plasma and are therefore coated with an electrical passivation layer.
申请公布号 US2011189861(A1) 申请公布日期 2011.08.04
申请号 US20100979761 申请日期 2010.12.28
申请人 ABB TECHNOLOGY AG 发明人 KUNOW MAGNUS;AKURATI KRANTHI;ZIMMERMANN ANDREAS;JERVIS RON
分类号 H01L21/31;C23C16/458;C23C16/50;H01L21/673;H01L21/68 主分类号 H01L21/31
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