发明名称 |
Deposition Method for Passivation of Silicon Wafers |
摘要 |
A substrate is mounted onto an elevated substrate support of a substrate carrier plate. The substrate carrier plate with the substrate is then placed in a plasma reactor. Due to the elevated substrate support, both opposite sides of the substrate are exposed to the plasma and are therefore coated with an electrical passivation layer.
|
申请公布号 |
US2011189861(A1) |
申请公布日期 |
2011.08.04 |
申请号 |
US20100979761 |
申请日期 |
2010.12.28 |
申请人 |
ABB TECHNOLOGY AG |
发明人 |
KUNOW MAGNUS;AKURATI KRANTHI;ZIMMERMANN ANDREAS;JERVIS RON |
分类号 |
H01L21/31;C23C16/458;C23C16/50;H01L21/673;H01L21/68 |
主分类号 |
H01L21/31 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|