发明名称 |
CONDUCTIVITY BASED SELECTIVE ETCH FOR GAN DEVICES AND APPLICATIONS THEREOF |
摘要 |
This invention relates to methods of generating NP gallium nitride (GaN) across large areas (> 1 cm2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications. |
申请公布号 |
WO2011094391(A1) |
申请公布日期 |
2011.08.04 |
申请号 |
WO2011US22701 |
申请日期 |
2011.01.27 |
申请人 |
YALE UNIVERSITY;HAN, JUNG;SUN, QIAN;ZHANG, YU |
发明人 |
HAN, JUNG;SUN, QIAN;ZHANG, YU |
分类号 |
H01L21/326 |
主分类号 |
H01L21/326 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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