| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for fabricating a composite device which integrates a group III-V device with a group IV device on a single die. <P>SOLUTION: The method includes steps of: forming group III-V semiconductor bodies 274a and 274b on a group IV semiconductor substrate 202; forming a trench in the group III-V semiconductor bodies; and forming a group IV semiconductor body 232 in the trench. The method also includes steps of: fabricating at least one group IV semiconductor device 272 in the group IV semiconductor body; and fabricating at least one group III-V semiconductor device 274 in the group III-V semiconductor body. The method further includes steps of: planarizing an upper surface of the group III-V semiconductor body and an upper surface of the group IV semiconductor body to render those respective upper surfaces substantially co-planar. In one embodiment, the method further includes a step of fabricating at least one passive device in a defective region of the group IV semiconductor body adjacent to a sidewall of the trench. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
