| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high voltage transistor that keeps a high voltage in off-state while having a low on-resistance property. <P>SOLUTION: The high voltage transistor that keeps a high voltage at off-state, while having a low on-resistance has one or more source regions disposed close to a multilayer extended drain structure. The structure includes an extended drift region that is separated from a field plate member with one or more dielectric layers. In the lowest circuit potential of the field plate member, the transistor keeps a high voltage applied on the drain in off-state. The layer structure can be made with various methods. The high voltage transistor structure having a stand-alone drift region can be made with a MOSFET structure mounted in a device near a source region, or eliminating the MOSFET structure. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
