| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a storage element and a storage device improving retention characteristics of written data, lowering a voltage in erasing, and reducing a variation in values of resistances in an erase state with respect to a plurality of times of write/erase operations. <P>SOLUTION: A storage layer 20 includes: a high resistance layer 22 including tellurium (Te); and an ion source layer 21 including at least one kind of metallic elements and at least one kind of chalcogen elements. The high resistance layer 22 principally comprises tellurium (Te) as a negative ion component. Accordingly, the metallic element diffused into the high resistance layer 22 from the ion source layer 21 in writing is stabilized and the retention characteristics of written data are improved. Further, a voltage necessary for erasing can be lowered and a variation in values of resistances in repeatedly performing write/erase operations multiple times can be reduced. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
