| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device having fine wiring in a high yield with high reliability. SOLUTION: A method of manufacturing the semiconductor device includes steps of: (S101) forming lower-layer wiring; (S102) forming an insulating film on the lower-layer wiring; (S103) forming resist on the insulating film; (S104) forming an opening for exposing the lower-layer wiring through dry etching using the resist as a mask; (S105) cleaning the opening using a cleaning liquid; and (S106) rinsing the opening having been cleaned. In the step S106, a rinsing liquid and a reducing gas are discharged from a two-fluid nozzle to rinse the bottom portion of the opening. COPYRIGHT: (C)2011,JPO&INPIT
|
