| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device that prevents the deterioration of the hydrogen diffusion blocking performance of a hydrogen barrier film covering a capacitor caused by an influence of an uneven shape by a plurality of ferroelectric capacitors, and the variation of a polarization characteristic of the ferroelectric capacitor, and to provide a manufacturing method therefor. SOLUTION: An interlayer insulation film 20 covering the ferroelectric capacitor 19 formed on a semiconductor substrate 1 employs an insulator containing metal oxide such as a perovskite metal oxide insulator, a bismuth stratified perovskite oxide ferroelectric or the like. Such a film can be formed by a spin coat method, so that a flat film can be formed on its surface, and a hydrogen barrier film 22 formed thereon is made uniform in thickness sufficient to keep hydrogen diffusion blocking performance. The film 20 has such a property that easily makes oxygen penetrate, so that the variation of polarization characteristic in the ferroelectrics capacitor 19 caused by oxygen heat treatment can be sufficiently prevented. COPYRIGHT: (C)2011,JPO&INPIT
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