| 摘要 |
According to one embodiment, a semiconductor storage device comprises processors, a nonvolatile memory with channels, a list storage, and a command generator. The list storage is configured to store an erase address list includes erase addresses of each of the channels of the nonvolatile memory. The command generator is configured to continuously generate a series of erase commands concerning the erase addresses in the erase address list in response to a single erase request generated from any one of the processors.
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