发明名称 |
Manufacturing method of thin film and metal line for display using the same, thin film transistor array panel, and method for manufacturing the same |
摘要 |
A method for forming a thin film according to an exemplary embodiment of the present invention includes forming the thin film at a power density in the range of approximately 1.5 to approximately 3 W/cm2 and at a pressure of an inert gas that is in the range of approximately 0.2 to approximately 0.3 Pa. This process results in an amorphous metal thin film barrier layer that prevents undesired diffusion from adjacent layers, even when this barrier layer is thinner than many conventional barrier layers.
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申请公布号 |
US2011186843(A1) |
申请公布日期 |
2011.08.04 |
申请号 |
US20110931516 |
申请日期 |
2011.02.03 |
申请人 |
KIM BYEONG-BEOM;PARK JE-HYEONG;YOUN JAE-HYOUNG;SONG JEAN-HO;KIM JONG-IN |
发明人 |
KIM BYEONG-BEOM;PARK JE-HYEONG;YOUN JAE-HYOUNG;SONG JEAN-HO;KIM JONG-IN |
分类号 |
H01L29/786;C23C14/14;C23C14/34;H01L21/336;H01L23/52 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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地址 |
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