发明名称 POWER SEMICONDUCTOR DEVICE
摘要 A power semiconductor device includes power semiconductor elements joined to wiring patterns of a circuit substrate, cylindrical external terminal communication sections, and wiring means for forming electrical connection between, for example, the power semiconductor elements and the cylindrical external terminal communication sections. The power semiconductor elements, the cylindrical external terminal communication sections, and the wiring means are sealed with transfer molding resin. The cylindrical external terminal communication sections are arranged on the wiring patterns so as to be substantially perpendicular to the wiring patterns, such that external terminals are insertable and connectable to the cylindrical external terminal communication sections, and such that a plurality of cylindrical external terminal communication sections among the cylindrical external terminal communication sections are arranged two-dimensionally on each of wiring patterns that act as main circuits.
申请公布号 US2011187003(A1) 申请公布日期 2011.08.04
申请号 US201113086499 申请日期 2011.04.14
申请人 发明人 OI TAKESHI;OKA SEIJI;OBIRAKI YOSHIKO;USUI OSAMU;NAKAYAMA YASUSHI
分类号 H01L27/12 主分类号 H01L27/12
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