| 摘要 |
PURPOSE: An apparatus for a batch type atomic layer deposition is provided to supply excellent throughput by processing a plurality of substrates in a batch type at a time. CONSTITUTION: A chamber forms vacuum inside. A first reactive gas layer forming part(30) is arranged inside the chamber and forms a first reactive gas layer. A purge gas layer forming part(40) is arranged in the inside of the chamber and forms a purge gas layer with the first reactive gas layer side by side. A second reaction gas layer formation part(50) is arranged in the inside of the chamber and forms a second reaction gas layer with the purge gas layer side by side. A substrate moving method(20) moves a substrate to successively pass the first reactive gas layer, the purge gas layer, and the second reaction gas layer.
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