| 摘要 |
<p>PURPOSE: A vertical type semiconductor device and a manufacturing method thereof are provided to improve a junction profile of a buried-bit-line junction area and to obtain good smoothness of the bit-line by easily removing a poly-silicon layer and Ti/TiN layer. CONSTITUTION: A pillar is expended from a surface of a semiconductor substrate(100). A mask layer(110) is formed on the semiconductor substrate. A silicon layer is formed a contact area of one-side wall of the pillar. A diffusion barrier layer is formed on the upper part of the silicon layer and comprises Ti/TiN layer. A vertical type semiconductor device comprises a junction area formed within the pillar of the silicon layer lower part.</p> |
