METHOD OF MANUFACTURING SINGLE-CRYSTAL GAN SUBSTRATE, AND SINGLE-CRYSTAL GAN SUBSTRATE

摘要

PURPOSE: A gallium nitride mono crystal substrate and a manufacturing method thereof are provided to designate an off angle and a direction of the off angle of a gallium nitride crystal by an off angle and a direction of the off angle of a ground substructure. CONSTITUTION: A GaN(Gallium Nitride) self-supporting substrate having off-angle is used as a ground substrate. A GaN mono crystal layer which has enough thickness is arranged on the GaN self-supporting substrate. The GaN mono crystal layer is sliced to the thickness direction and manufactured. GaN self-supporting substrates having a plurality of off angles are manufactured.