摘要 |
<p>The present invention relates to a method for forming self-aligned metal silicide contacts over at least two silicon-containing semiconductor regions that are spaced apart from each other by an exposed dielectric region. Preferably, each of the self-aligned metal silicide contacts so formed comprises at least nickel silicide and platinum silicide with a substantially smooth surface, and the exposed dielectric region is essentially free of metal and metal silicide. More preferably, the method comprises the steps of nickel or nickel alloy deposition, low-temperature annealing, nickel etching, high-temperature annealing, and aqua regia etching.</p> |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FANG, SUNFEI;KNARR, RANDOLPH, F.;KRISHNAN, MAHADEVAIYER;LAVOIE, CHRISTIAN;MO, RENEE, T.;PRANATHARTHIHARAN, BALASUBRAMANIAN;STRANE, JAY, W. |