| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent an increase the electric field between a gate and a substrate although the degree of integration of the semiconductor device increases by including an electric field buffer layer between the gate and the substrate. CONSTITUTION: A gate(36) is formed on the top of a substrate(31). A source and drain region(38) is formed in both side of the substrate. A electric field buffer layer(32A) is formed between the substrate and a gate electrode(34) and contacts with the source and drain region.</p> |
