METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE

摘要

Provided is a photoelectric conversion device fabrication method that realizes both high productivity and high conversion efficiency by rapidly forming an n-layer having good coverage. The fabrication method for a photoelectric conversion device (100) includes a step of forming a silicon photoelectric conversion layer (3) on a substrate (1) by a plasma CVD method. In the fabrication method for the photoelectric conversion device (100), the step of forming the photoelectric conversion layer (3) includes a step of forming an i-layer (42) formed of crystalline silicon and a step of forming, on the i-layer (42), an n-layer (43) under a condition with a hydrogen dilution ratio of 0 to 10, inclusive.