| 摘要 |
PURPOSE: A semiconductor memory device is provided to prevent a cause of a malfunction by applying current and voltage flowing in a unit cell. CONSTITUTION: In a semiconductor memory device, a unit cell(220) comprises a memory device which is changed according to a different resistance. A write driver(210) outputs a program current and voltage. The unit cell is programmed by the program current and voltage in response to a test signal. The write driver includes a current mirror circuit and a test circuit. A current mirror circuit mirrors a reference current. The current mirror circuit supplies the program current and voltage to the current mirror circuit. A test circuit outputs the program current and voltage.
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