| 摘要 |
<p>An avalanche photodiode includes a high quality electrooptically active substrate, a handle substrate bonded to the active substrate, and an avalanche photodiode active area formed in the high quality electrooptically active substrate including a high field region for generating avalanche current gain. By using a handle wafer bonded to the active substrate, the avalanche photodiode of the subject invention has a greater strength and thickness without the reduction of desirable electrical characteristics.</p> |
