发明名称 |
POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS |
摘要 |
<p>PURPOSE: A positive type resist material and a pattern forming method are provided to implement a fine processing process by increasing the resolution and the mask fidelity of a resist pattern. CONSTITUTION: A positive type resist material includes a compound generating acid by responding to active ray or radiation ray and a resin component which is soluble in an alkaline developing solution based on the action of acid. In the resin component, at least part of a resin soluble group is carboxylic group. The positive type resin material includes a compound activating or condensing the carboxylic group, which is carbodimide or a triazine-based condensing agent. A nitrogen-containing compound, a quencher, and a surfactant are further contained in the positive resist material.</p> |
申请公布号 |
KR20110088421(A) |
申请公布日期 |
2011.08.03 |
申请号 |
KR20110007376 |
申请日期 |
2011.01.25 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
KUSAKI WATARU;KINSHO TAKESHI;WATANABE TAKERU |
分类号 |
G03F7/039;G03F7/004;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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