发明名称 POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS
摘要 <p>PURPOSE: A positive type resist material and a pattern forming method are provided to implement a fine processing process by increasing the resolution and the mask fidelity of a resist pattern. CONSTITUTION: A positive type resist material includes a compound generating acid by responding to active ray or radiation ray and a resin component which is soluble in an alkaline developing solution based on the action of acid. In the resin component, at least part of a resin soluble group is carboxylic group. The positive type resin material includes a compound activating or condensing the carboxylic group, which is carbodimide or a triazine-based condensing agent. A nitrogen-containing compound, a quencher, and a surfactant are further contained in the positive resist material.</p>
申请公布号 KR20110088421(A) 申请公布日期 2011.08.03
申请号 KR20110007376 申请日期 2011.01.25
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 KUSAKI WATARU;KINSHO TAKESHI;WATANABE TAKERU
分类号 G03F7/039;G03F7/004;H01L21/027 主分类号 G03F7/039
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