| 摘要 |
PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to prevent the degradation of optical power according to optical absorption by an ohmic electrode in which reflectance is excellent and to print out the current according to the high-current approval without separate heat treatment. CONSTITUTION: A semiconductor layer(120) has a light emitting structure. An ohmic electrode comprises a nano dot layer, a contact layer, a reflecting layer, a diffusion stopper, and a capping layer formed on the semiconductor layer. The nano dot layer is formed on a nitrogen pole surface of an above semiconductor layer and is formed into one or more materials among Ag, Al, and Au. The contact layer is formed into one or more materials among Ni, Ni-Ti alloy, Ni-Al alloy, Ti-Al alloy, mg-Al alloy, Ta, Ti, W, and W-Ti alloy. The reflecting layer is formed into one or more materials among Al, Ag, Ag-Al alloy, Ag-Cu alloy, Ag-In alloy, Ag-Mg alloy, Al-Cu alloy, Al-In alloy, and Al-Mg alloy. The diffusion stopper is formed into one or more materials among the Ti, Cr, Ru, Pt, Ni, Pd, Ir, Rh, Nb W, W-Ti alloy or one or more oxide films among RuOx, NiOx, IrOx, RhOx, NbOx, TiOx, TaOx, and CrOx.
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