发明名称 |
A SILICON BASED NANOSCALE CROSSBAR MEMORY |
摘要 |
The present application describes a crossbar memory array. The memory array includes a first array of parallel nanowires of a first material and a second array of parallel nanowires of a second material. The first and the second array are oriented at an angle with each other. The array further includes a plurality of nanostructures of non-crystalline silicon disposed between a nanowire of the first material and a nanowire of the second material at each intersection of the two arrays. The nanostructures form a resistive memory cell together with the nanowires of the first and second materials. |
申请公布号 |
EP2351083(A2) |
申请公布日期 |
2011.08.03 |
申请号 |
EP20090822530 |
申请日期 |
2009.10.20 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF MICHIGAN |
发明人 |
LU, WEI;JO, SUNG, HYUN;KIM, KUK-HWAN |
分类号 |
H01L27/115;G11C11/56;G11C13/00;H01L21/8247;H01L27/24;H01L45/00 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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