发明名称 |
METHOD AND APPARATUS FOR WAFER BONDING WITH ENHANCED WAFER MATING |
摘要 |
An improved wafer-to-wafer bonding method includes aligning an upper and a lower wafer and initiating a bond at a single point by applying pressure to a single point of the upper wafer via the flow of pressurized gas through a port terminating at the single point. The bond-front propagates radially across the aligned oppositely oriented wafer surfaces at a set radial velocity rate bringing the two wafer surfaces into full atomic contact by controlling the gas pressure and/or controlling the velocity of the motion of the lower wafer up toward the upper wafer. |
申请公布号 |
EP2351076(A2) |
申请公布日期 |
2011.08.03 |
申请号 |
EP20090826887 |
申请日期 |
2009.11.16 |
申请人 |
SUESS MICROTEC LITHOGRAPHY GMBH |
发明人 |
GEORGE, GREGORY |
分类号 |
H01L23/12;B81B7/00;H01L21/18;H01L21/20;H01L21/67 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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