发明名称 |
LIQUID COMPOSITION, METHOD OF PRODUCING SILICON SUBSTRATE, AND METHOD OF PRODUCING LIQUID DISCHARGE HEAD SUBSTRATE |
摘要 |
PURPOSE: A liquid composition, in which an etching rate of silicon, and method of producing silicon substrate and liquid discharge head substrate are provided to reduce etching property about silicon oxide membrane used as etching mask. CONSTITUTION: A liquid composition comprises cesium hydroxide, an alkaline organic compound, and water. The liquid composition is used to etch aeolotropically crystallization using silicon oxide membrane as mask. The silicon substrate comprises an etching mask formed with silicon oxide membrane. The alkaline organic compound includes tetramethyl ammonium hydroxide. A mass rate of the cesium hydroxide is 1 ~ 40 weight% about the weight of the liquid composition. A silicon oxide film is removed from a silicon substrate(1) in order to form through holes(6). |
申请公布号 |
KR20110088450(A) |
申请公布日期 |
2011.08.03 |
申请号 |
KR20110008193 |
申请日期 |
2011.01.27 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
ABO HIROYUKI;YONEMOTO TAICHI;KOYAMA SHUJI;FURUSAWA KENTA;KISHIMOTO KEISUKE |
分类号 |
C23F1/40;B81C1/00;H01L21/306 |
主分类号 |
C23F1/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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