| 摘要 |
PURPOSE: A gallium nitride based semiconductor light emitting device is provided to maximize optical extraction efficiency by preventing the absorption of light by an electrode and the flow of the light inside. CONSTITUTION: An n-GaN(Gallium Nitride) layer(120), an active layer(130), and an p-GaN layer(140) are successively formed in a substrate(110). The n-GaN layer, and a part of the p-GaN layer and active layer are removed and an n-type electrode(150) is formed in the area in which the n-GaN layer exposes. The n-type electrodeis formed in an area, in which the n-GaN layer is exposed, after a part of the n-GaN layer, the active layer, and the p-GaN layer, is removed. A current spreading layer(160) is formed on a p-GaN layer. A p-type electrode(170) is formed on the current spreading layer. A current blocking layer(180) is asymmetrically formed based on the center of the p-type electrode. The width of a domain, in which a current flows wider along the center of the p electrode, is formed more widely in the current blocking layer. The current blocking layer is formed to include an area which corresponds to an area between the p-GaN layer and the current spreading layer and includes materials with the same or bigger refractive index like the refractive index of p-GaN. An area except the area corresponding to the p electrode among the top surface of the current blocking layer becomes processed with ruggedness formation or surface texturing.
|
