| 摘要 |
PURPOSE: A semiconductor light emitting device and a method for manufacturing thereof are provided to improve reliability and optical extraction with uniform light emitting distribution by canceling the current concentration phenomenon generated in a semiconductor light emitting device. CONSTITUTION: An n-type semiconductor layer(120), an active layer(130), and a p-type semiconductor layer(140) are successively formed in a substrate. An n-type electrode(150) is formed in an area, in which the n-type semiconductor layer is exposed, after a part of the n-type semiconductor layer, the p-type semiconductor layer, and the active layer is removed. A current spreading layer(160) is formed on a p-type semiconductor layer. A p-type electrode(170) is formed on the current spreading layer. The area corresponding to the p-type electrode is formed between the p-type semiconductor layer and the current spreading layer. A current blocking layer(180) is asymmetrically formed based on the center of the p-type electrode. The width of a domain, in which a current flows wider along the center of the p electrode, is formed more widely in the current blocking layer.
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