发明名称
摘要 <p>PROBLEM TO BE SOLVED: To provide a multilayer halftone type phase shift mask in which a transmittance suppressing effect produced when using the halftone type phase shift mask consisting of a conventional bilayer or multilayer film in the wavelength range of 140 to 200 nm including the wavelength of 157 nm of an F2 excimer laser, and produced accompanying a high transmittance layer does not matter, and to provide its mask blank. SOLUTION: A phase shifter film is composed of two layers of a low transmittance layer with a function to mainly adjust transmittance, and a high transmittance layer with a function to mainly adjust a phase shift amount. When the extinction coefficient of the low transmittance layer is defined as K1 and the extinction coefficient of the high transmittance layer is defined as K2 , the range of K2 &lt;K1 &lt;=3.0 is satisfied in an exposure wavelength &lambda selected from the range of 140 to 200 nm wavelength. When the film thickness of the low transmittance layer is defined as d1 , 0.001&lt;=K1 d1 /&lambda &lt;=0.500 is satisfied in the exposure wavelength &lambda .</p>
申请公布号 JP4737483(B2) 申请公布日期 2011.08.03
申请号 JP20010099999 申请日期 2001.03.30
申请人 发明人
分类号 G03F1/32;G03F1/68;G03F7/20;H01L21/027 主分类号 G03F1/32
代理机构 代理人
主权项
地址