Semiconductor device having at least four side-by-side electrodes of equal length and equal pitch with at least two transistor connections to power or ground

摘要

A substrate portion of a semiconductor device is formed to include a plurality of diffusion regions that are defined in a non-symmetrical manner relative to a virtual line defined to bisect the substrate portion. A gate electrode level region is formed above the substrate portion to include a number of conductive features defined to extend in only a first parallel direction. Each of the number of conductive features within the gate electrode level region is fabricated from a respective originating rectangular-shaped layout feature. The conductive features within the gate electrode level region are defined along at least four different virtual lines of extent in the first parallel direction. A width size of the conductive features within the gate electrode level region is measured perpendicular to the first parallel direction and is less than a wavelength of light used in a photolithography process to fabricate the conductive features.