发明名称 Method for manufacturing semiconductor device
摘要 When printing is performed on a base substrate with a laser after a single crystal silicon layer is transferred to the base substrate, there are problems such as ablation of the single crystal silicon layer in the peripheral portion of a printed dot or attachment of glass chips or the like to the surface of the single crystal silicon layer. After printing is performed on the bonding surface of a silicon wafer with a laser, the surface of the silicon wafer is polished by CMP (chemical mechanical polishing), so that the projection in the peripheral portion of the printed dot is removed. After that, the silicon wafer is bonded to the base substrate. Since the depression of the printed dot remains to some extent by a chemical etching effect even after the polishing by CMP, the single crystal silicon layer is not transferred only at the depression portion at the time of the transfer; accordingly, the information is left on the base substrate.
申请公布号 US7989315(B2) 申请公布日期 2011.08.02
申请号 US20090624691 申请日期 2009.11.24
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KAKEHATA TETSUYA;KUDO TAKASHI
分类号 H01L21/762 主分类号 H01L21/762
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