| 摘要 |
PURPOSE: A semiconductor apparatus and a manufacturing method of the same are provided to prevent an increasing junction leakage current due to an increasing degree of integration, an increasing tunneling leakage current due to increasing electric field, and characteristic deterioration of a semiconductor apparatus due to an increasing leakage current. CONSTITUTION: A semiconductor apparatus includes a gate electrode(35), a gate insulating layer(32A), a drain region(D), and a source region(S). The gate electrode is located on a substrate. The gate insulating layer intervenes between the gate electrode and the substrate, and the thickness at one edge of the gate electrode is locally thicker. The drain region and source region are respectively formed on one side of the gate electrode and another side of the substrate and has an asymmetric structure.
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