METHOD FOR MANUFACTURING SINGLE CRYSTAL

摘要

PURPOSE: A monocrystal growing method is provided to control a crystallizing interface according to a high volatility low melting temperature dopant injection, thereby enabling control in a temperature side or monocrystal growing speed side during each monocrystal growing process. CONSTITUTION: A monocrystal growing method includes the following procedures. A silicon melt is formed. A dopant with a lower melting point than silicon is injected into the silicon melt. The temperature of each monocrystal growing step without a dopant injection is higher than the temperature of each monocrystal growing step with the dopant injection. The temperature decreasing width of each monocrystal growing step in a case of a first dopant density is smaller than the temperature decreasing width of each monocrystal growing step with a second dopant density which is higher than the first dopant density.