SEMICONDUCTOR DEVICE FOR EMITTING LIGHT AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to supply excellent thermal stability by actuating a contact layer on a diffusion barrier layer, processing a semiconductor light emitting device by heat in a nitrogen atmosphere, and controlling the deterioration by the heat generated in the implantation condition with high current and high temperature. CONSTITUTION: A semiconductor layer(120) has a light emitting structure. An ohmic electrode comprises a nano dot layer, formed on a semiconductor layer, a contact layer, a diffusion stop layer, and a capping layer A nano dot layer is formed on the nitrogen pole surface of the semiconductor layer with a least one of Ag, Al, and Au. A contact layer is formed with at least one of Ti, Ti-Al Alloy, Ti-Ni Alloy, and Ta, Al, W, W-Ti Alloy. A diffusion stop layer is formed with at least one metal layer of Cr, Ru, Pt, Ni, Pd, Ir, Rh, Nb and at least one oxide film of RuOx, NiOx, IrOx, RhOx,NbOx, TiOx, TaOx, CrOx. A capping layer is formed with at least one of Au and Al.