| 摘要 |
<p>PURPOSE: A method for manufacturing GaN powder and a nitride based luminous element using GaN powder manufactured by the method are provided to simply manufacture high-price GaN powder with material from etching GaN in the manufacturing of the nitride based luminous element. CONSTITUTION: Materials from etching GaN, which is produced from etching a GaN luminous element, are collected(S310). The collected materials from etching GaN are washed(S320). An indium(In) component, which is included in the materials from etching GaN, is eliminated while the materials from etching GaN, which is washed, is heated(S330). The materials from etching GaN, in which the indium component is removed, is crushed and become powdery(S340).</p> |
