发明名称 |
METHODS FOR SELECTIVE PERMEATION OF SELF-ASSEMBLED BLOCK COPOLYMERS WITH METAL OXIDES, METHODS FOR FORMING METAL OXIDE STRUCTURES, AND SEMICONDUCTOR STRUCTURES INCLUDING SAME |
摘要 |
Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the at least one soluble block laterally aligned with the trench and positioned within a matrix of the at least one insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor that impregnates the at least one soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface. Semiconductor device structures are also described. |
申请公布号 |
KR20110086834(A) |
申请公布日期 |
2011.08.01 |
申请号 |
KR20117011737 |
申请日期 |
2009.10.26 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
MILLWARD DAN B.;QUICK TIMOTHY A.;GREELEY J. NEIL |
分类号 |
C01B13/14;C08J5/18;C08K3/22;H01L21/31 |
主分类号 |
C01B13/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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