NITRIDE BASED LIGHT EMITTING DEVICE WITH CRYSTALLITY AND BRIGHTNESS AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A nitride based light emitting device with superior crystallizability and brightness and a manufacturing method thereof are provided to minimize an influence on a light emitting active layer by growing a N type ZnO(Zinc Oxide) layer, which grows in relatively low temperature, on the light emitting active layer. CONSTITUTION: The powder type of a seed layer for growing nitrides is formed in a growth substrate(110). A p-type nitride layer(130) is formed on the seed layer for growing the nitrides. A light emitting active layer(140) is formed on the p-type nitride layer. An n-type ZnO layer(150) is formed on the light emitting active layer. The seed layer for growing the nitrides is formed with a GaN powder or a sapphire powder.