发明名称 |
SERIES CONNECTED FLIP CHIP LEDS WITH GROWTH SUBSTRATE REMOVED |
摘要 |
LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs. |
申请公布号 |
KR20110086724(A) |
申请公布日期 |
2011.07.29 |
申请号 |
KR20117012834 |
申请日期 |
2009.10.29 |
申请人 |
PHILIPS LUMILEDS LIGHTING COMPANY, LLC;KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
KRAMES MICHAEL R.;EPLER JOHN E.;STEIGERWALD DANIEL A.;MARGALITH TAL |
分类号 |
H01L33/62;H01L21/20;H01L27/15;H01L33/12 |
主分类号 |
H01L33/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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