发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To reduce the cost of a multi-pin semiconductor device. <P>SOLUTION: In the flip-chip bonding type BGA, a plurality of signal bonding electrodes 2k, in a peripheral area of the upper surface of a multilayer wiring substrate are separated into inner and outer ones and a plurality of signal through-holes 2q coupled to a plurality of signal wirings 2u drawn inside, are located between a plurality of rows of signal bonding electrodes 2k and a central region where a plurality of bonding electrodes for core power supply are located so that the chip pad pitch can be decreased and the cost of the BGA can be reduced, without having to increase the number of layers in the multilayer wiring substrate. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011146489(A) 申请公布日期 2011.07.28
申请号 JP20100005403 申请日期 2010.01.14
申请人 RENESAS ELECTRONICS CORP 发明人 BABA SHINJI;IWASAKI TOSHIHIRO;WATANABE MASAKI
分类号 H01L23/12;H01L21/60 主分类号 H01L23/12
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