| 摘要 |
PROBLEM TO BE SOLVED: To prevent data corruption due to noise between bit lines during writing. SOLUTION: The semiconductor memory device is equipped with: bit lines BLT, BLB using open bit line configurations; sense amplifiers SA for amplifying a potential difference of the bit lines BLT, BLB; a pair of local data lines LIOT, LIOB corresponding to each of the bit lines BLT, BLB; and a write amplifier circuit 70 for changing a potential of the local data line LIOB without changing a potential of the local data line LIOT when data are written into a memory cell MC connected to the bit line BLT, and for changing the potential of the local data line LIOT without changing the potential of the local data line LIOB when the data are written into a memory cell MC connected to the bit line BLB. Thus, corruption of data in a memory cell to be stored and not to be written in the write operation is prevented. COPYRIGHT: (C)2011,JPO&INPIT
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